US Patent Issued to MURATA MANUFACTURING on May 13 for "Trench capacitor structure with hybrid filling layer" (French Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,589, issued on May 13, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Trench capacitor structure with hybrid filling layer" was invented by Larry Buffle (Grenoble, France), Frederic Voiron (Barraux, France) and Sophie Archambault (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure that includes a silicon substrate having a trench structure formed therein; a dielectric disposed over a surface of the trench structure, conformal to the surface of the trench structure; and a filling layer disposed over the dielectric layer and into the trench structure, the filling layer including a conductive laye...