US Patent Issued to MURATA MANUFACTURING on June 17 for "Semiconductor structure with selective bottom terminal contacting" (French Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,293, issued on June 17, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Semiconductor structure with selective bottom terminal contacting" was invented by Julien El Sabahy (Grenoble, France), Larry Buffle (Grenoble, France), Stephane Bouvier (Cairon, France) and Frederic Voiron (Barraux, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semi-conductor structure with selective bottom terminal contacting is described. The semiconductor device comprises a first metal layer disposed over a substrate; a conductive layer disposed over the first metal layer; and a second metal layer disposed over the conductive layer, the second m...