US Patent Issued to MURATA MANUFACTURING on July 22 for "Resonance device with substrate having oxide film containing through hole and metal therin, and manufacturing method therefor" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,583, issued on July 22, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Resonance device with substrate having oxide film containing through hole and metal therin, and manufacturing method therefor" was invented by Masakazu Fukumitsu (Nagaokakyo, Japan) and Yoshiyuki Higuchi (Nagaokakyo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resonance device that includes a MEMS substrate that includes a resonator, a top cover having a silicon oxide film on a surface thereof that faces the MEMS substrate, and a bonding part that bonds the MEMS substrate and the top cover to each other so as to seal a vibration space of the resona...