ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,011, issued on Jan. 13, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).
"3D capacitors" was invented by Stephane Bouvier (Cairon, France), Sebastien Iochem (Caen, France) and David Denis (Bayeux, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional capacitor component that includes a substrate having a textured (contoured) surface and a stack of layers formed conformally over the textured surface to constitute a capacitive stack structure. Respective contacts to the bottom and top electrodes of the capacitive stack structure are both provided at a first side of the component. The bottom electrode and substrate...