ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,402, issued on Dec. 9, was assigned to Murata Manufacturing Co. Ltd. (Kyoto-fu, Japan).
"Semiconductor device" was invented by Shinya Masuno (Nagaokakyo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device layer contains a semiconductor element in part of a region thereof. An insulating layer is on one surface of the device layer. A support substrate including a semiconductor is on a surface of the insulating layer on an opposite side from a side where the device layer is disposed. The support substrate has an opening overlapping a semiconductor element region in which the semiconductor element is formed in plan view and extending from a bo...