ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,241, issued on June 17, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan) and COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Manufacturing method of a nanowire-based structure and capacitor array component including the structure" was invented by Julien El Sabahy (Grenoble, France), Frederic Voiron (Barraux, France) and Guy Parat (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nanowire structure is manufactured by forming islands of conductive material on a substrate, and a conductive sacrificial layer in the space between conductive islands. The conductive islands include an anodic etch b...