ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,429, issued on July 1, was assigned to MQSEMI AG (Zug, Switzerland).
"Semiconductor device and method for producing same" was invented by Munaf Rahimo (Gaensbrunnen, Switzerland) and Iulian Nistor (Niederweningen, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Metal Oxide Semiconductor (MOS) cell design has traditional planar cells extending in a first dimension, and trenches with their length extending in a third dimension, orthogonal to the first dimension in a top view. The manufacturing process includes forming a horizontal channel, and a plurality of trenches discontinued in the planar cell regions. Horizontal planar channels are f...