ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,903, issued on Jan. 28, was assigned to MQSEMI AG (Zug, Switzerland).
"Semiconductor device and method for designing thereof" was invented by Munaf Rahimo (Gaensbrunnen, Switzerland) and Iulian Nistor (Niederweningen, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with an active transistor cell comprising a p-doped first and second base layers, surrounding an n type source region, the device further comprising a plurality of first gate electrodes embedded in trench recesses, has additional fortifying p-doped layers embedding the opposite ends of the trench recesses. The additional fortifying layers do not affect th...