ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,374, issued on Feb. 25, was assigned to mqSemi AG (Zug, Switzerland).
"Semiconductor device and method for producing same" was invented by Munaf Rahimo (Gaensbrunnen, Switzerland) and Iulian Nistor (Niederweningen, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "In this patent application, a new Metal Oxide Semiconductor MOS planar cell design concept is proposed. The inventive power semiconductor includes a planar cell forming a horizontal channel and a plurality of trenches, which are arranged orthogonally to the plane of the planar cells. A second p base layer is introduced which extends perpendicularly deeper than the source region an...