US Patent Issued to Monolithic Power Systems on Oct. 14 for "Semiconductor device having a termination region with deep trench isolation" (Italian Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,274, issued on Oct. 14, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.).

"Semiconductor device having a termination region with deep trench isolation" was invented by Ignacio Cortes Mayol (Spain, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a termination region comprising deep trench isolation ("DTI"). The termination region may be formed in a semiconductor layer of a first conductivity type and may include a vertical path cell of a second conductivity type vertically extended into the semiconductor layer with a vertical path cell depth, a first type deep trench termination cell ("DTTC") disposed...