US Patent Issued to Monolithic 3D on Nov. 4 for "Method for producing 3D semiconductor devices and structures with transistors and memory cells" (American, Israeli Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,734, issued on Nov. 4, was assigned to Monolithic 3D Inc. (Allen, Texas).

"Method for producing 3D semiconductor devices and structures with transistors and memory cells" was invented by Deepak C. Sekar (Sunnyvale, Calif.) and Zvi Or-Bach (Haifa, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a 3D semiconductor device including: providing a first level, including a single crystal layer; forming memory control circuits in and/or on the first level which include first single crystal transistors and at least two interconnection metal layers; forming at least one second level; performing a first etch step into the second lev...