US Patent Issued to Monolithic 3D on Nov. 18 for "3D semiconductor device and structure with three levels and isolation layers" (American, Israeli Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,168, issued on Nov. 18, was assigned to Monolithic 3D Inc. (Allen, Texas).

"3D semiconductor device and structure with three levels and isolation layers" was invented by Zvi Or-Bach (Haifa, Israel), Deepak C. Sekar (Sunnyvale, Calif.) and Brian Cronquist (Klamath Falls, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device, the device including: a first level including single crystal first transistors, a first metal layer, and a first isolation layer; a second level including second transistors and a second isolation layer, where the first level is overlaid by the second level; a third level including single crystal third tra...