US Patent Issued to Monolithic 3D on Nov. 11 for "3D semiconductor device and structure with metal layers and memory cells" (American, Israeli Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,735, issued on Nov. 11, was assigned to Monolithic 3D Inc. (Allen, Texas).

"3D semiconductor device and structure with metal layers and memory cells" was invented by Zvi Or-Bach (Haifa, Israel), Brian Cronquist (Klamath Falls, Ore.) and Deepak C. Sekar (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device, the device including: a first level including a first single crystal layer and including first transistors each of which includes a single crystal channel; a first metal layer; a second metal layer overlaying the first metal layer; a second level including second transistors and overlaying the second metal lay...