ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,347, issued on July 22, was assigned to Monolithic 3D Inc. (Klamath Falls, Ore.).

"3D semiconductor device and structure with metal layers and a power delivery path" was invented by Zvi Or-Bach (Haifa, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device, the device including: a first level including single crystal first transistors, a first metal layer, and a first isolation layer; a second level including second transistors and a second isolation layer, where the first level is overlaid by the second level; a third level including single crystal third transistors, where the second level is overlaid by the third level, wh...