ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,138, issued on July 22, was assigned to Monolithic 3D Inc. (Klamath Falls, Ore.).
"3D semiconductor device and structure with metal layers" was invented by Zvi Or-Bach (Haifa, Israel) and Brian Cronquist (Klamath Falls, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device including: a first level with first-transistors, a single crystal layer overlaid by at least one first metal-layer which includes interconnects between the first-transistors forming first control circuits with a sense amplifiers; the first metal-layer(s) overlaid by a second metal-layer which is overlaid by a second level which includes first memory cells w...