US Patent Issued to Monolithic 3D on Aug. 26 for "3D semiconductor device and structure with metal layers" (American, Israeli Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,961, issued on Aug. 26, was assigned to Monolithic 3D Inc. (Klamath Falls, Ore.).

"3D semiconductor device and structure with metal layers" was invented by Zvi Or-Bach (Haifa, Israel) and Brian Cronquist (Klamath Falls, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including: a first level including: a first silicon layer including a first single crystal silicon layer; first transistors each including a single-crystal channel; a first metal layer connected to the first transistors and the second metal layer; a third metal layer connected to the second metal layer; a second level including second transistors; a third leve...