ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,015, issued on Sept. 9, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Simulation model and simulation method" was invented by Toshiya Tadakuma (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present disclosure is to accurately simulate the operation of a CSTBT. The simulation model of a CSTBT includes a MOSFET, a diode whose cathode is connected to the drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET, capacitance CCG connected between a gate of the MOSFET and an anode of the diode, capacitance CCE connected between a source of the MOSFET and the anode of the diode, capacitance CDG...