US Patent Issued to Mitsubishi Electric on Sept. 23 for "Semiconductor device including IGBT and MOSFET" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,425,015, issued on Sept. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device including IGBT and MOSFET" was invented by Taketo Nishiyama (Tokyo) and Hiroki Hidaka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A technique disclosed in the specification of the present application is a technique for increasing a degree of freedom of an IGBT in a device, and as a result, achieving downsizing of the device. A semiconductor device relating to a technique disclosed in the specification of the present application includes a plurality of IGBTs connected in series on a power source line in which bus current flows and a MOSFET con...