ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,526, issued on Sept. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and power conversion device" was invented by Shogo Shibata (Tokyo), Shuhei Yokoyama (Tokyo) and Naoki Ikeda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The plurality of control terminals are drawn out from the first side surface of the sealing resin. The plurality of main terminals are drawn out from the second side surface of the sealing resin. Each of the main terminals includes, in the sealing resin, a bonding section wire-connected to one of the semiconductor chips, a heat transfer section adjacent to the bonding section, and a mounting s...