US Patent Issued to Mitsubishi Electric on Sept. 23 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,301, issued on Sept. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Yasuhiro Yoshiura (Tokyo), Eiko Otsuki (Tokyo) and Hayato Okamoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the present disclosure, a semiconductor device includes a semiconductor substrate of a first conductivity type, in which a cell region, a ballast resistor region, and a termination region surrounding the ballast resistor region are defined, a first insulating film arranged on a front surface of the semiconductor substrate, having a first opening in the cell...