US Patent Issued to Mitsubishi Electric on Sept. 23 for "Semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,290, issued on Sept. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Katsumi Nakamura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a drift layer of a first conductivity type, a buffer layer of the first conductivity type, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are provided on the side of the second main surface of the semiconductor substrate with respect to the buffer layer. The first semiconductor layer and the...