US Patent Issued to MITSUBISHI ELECTRIC on Sept. 23 for "Semiconductor device, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,336, issued on Sept. 23, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device, and method of manufacturing semiconductor device" was invented by Koji Yoshitsugu (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nitride semiconductor laminated structure formed on a substrate, a source electrode formed on the nitride semiconductor laminated structure, a drain electrode and a gate electrode, and a surface protection film covering the nitride semiconductor laminated structure. the nitride semiconductor laminated structure includes: a first nitride semiconductor layer forme...