US Patent Issued to MITSUBISHI ELECTRIC on Sept. 16 for "Device and method for sensing an over-temperature of a power semiconductor" (French Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,528, issued on Sept. 16, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Device and method for sensing an over-temperature of a power semiconductor" was invented by Chihiro Kawahara (Rennes, France), Julio Brandelero (Rennes, France) and Stefan Mollov (Rennes, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, comp...