US Patent Issued to Mitsubishi Electric on Oct. 7 for "Power semiconductor device including a substrate and an electrode having multiple layers with one of the upper layers being in direct contact with a portion of the surface of the substrate" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,617, issued on Oct. 7, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Power semiconductor device including a substrate and an electrode having multiple layers with one of the upper layers being in direct contact with a portion of the surface of the substrate" was invented by Toshiki Fukasawa (Tokyo), Tomohito Kudo (Tokyo) and Hideki Haruguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon substrate has first to fourth semiconductor regions. The third semiconductor region is separated from the first semiconductor region of a first conductivity type by the second semiconductor region of a second conductivity type. The fourth semic...