US Patent Issued to Mitsubishi Electric on Oct. 28 for "Semiconductor device, power conversion apparatus, and method for driving semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,800, issued on Oct. 28, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device, power conversion apparatus, and method for driving semiconductor device" was invented by Katsumi Satoh (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a layer structure including a first gate electrode and a second gate electrode, and a first main electrode and a second main electrode that can be electrically connected through the layer structure. The threshold voltage of the second gate electrode is higher than the threshold voltage of the first gate electrode. In the Alpha state and the Beta condition, the switchi...