US Patent Issued to Mitsubishi Electric on Oct. 21 for "Semiconductor wafer and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,397, issued on Oct. 21, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor wafer and method for manufacturing semiconductor device" was invented by Kohei Nishiguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor wafer device according to the present invention includes a SiC substrate having an upper surface and a rear surface as a surface on the opposite side to the upper surface, and an impurity implantation layer provided on the entire rear surface of the SiC substrate, formed of a same base material as that forming the SiC substrate, including an impurity, and having a lower transmittance of visible light or ...