US Patent Issued to Mitsubishi Electric on Oct. 14 for "Power semiconductor device and method of manufacturing power semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,241, issued on Oct. 14, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Power semiconductor device and method of manufacturing power semiconductor device" was invented by Katsumi Nakamura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a power semiconductor device, the present disclosure is intended to control tradeoff characteristics while realizing operation in a high-speed side range of the tradeoff characteristics without depending on a carrier lifetime control technique. An n+ cathode layer includes a first n+ cathode layer contacting a second metal layer, and a second n+ cathode layer provided between the first n+ cathode layer an...