US Patent Issued to MITSUBISHI ELECTRIC on Nov. 4 for "Semiconductor device and power conversion device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,767, issued on Nov. 4, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and power conversion device" was invented by Kohei Ebihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, a semiconductor substrate is divided into an inner region in which an active region is provided and an outer region surrounding the inner region. The semiconductor device includes a semiconductor layer of a first conductivity type, a termination well region of a second conductivity type selectively provided in an upper layer portion of the semiconductor layer to surround the inner region, an impurity region selectively...