US Patent Issued to MITSUBISHI ELECTRIC on Nov. 4 for "Gate leakage current detection determining gate withstand voltage rating and a power converter" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,526, issued on Nov. 4, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Gate leakage current detection determining gate withstand voltage rating and a power converter" was invented by Kohei Onda (Tokyo) and Shotaro Karasuyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor driving device includes: a control unit which generates an ON/OFF command for a semiconductor switching element; a gate power supply unit which generates voltage to be applied between a gate terminal and a source terminal of the semiconductor switching element; a gate driving unit which applies the voltage generated by the gate power supply unit, between th...