US Patent Issued to Mitsubishi Electric on Nov. 25 for "Semiconductor pressure sensor and manufacturing method of semiconductor pressure sensor" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,479,717, issued on Nov. 25, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor pressure sensor and manufacturing method of semiconductor pressure sensor" was invented by Kimitoshi Sato (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the fir...