US Patent Issued to MITSUBISHI ELECTRIC on Nov. 25 for "Method and system for determining junction temperature of power semiconductor" (French Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,823, issued on Nov. 25, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Method and system for determining junction temperature of power semiconductor" was invented by Julio Brandelero (Rennes, France) and Guillaume Lefevre (Rennes, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention concerns a method for determining the junction temperature of a power semiconductor using a temperature sensitive electrical parameter of a thermal sensitive electrical device in a system comprising the thermal sensitive electrical device, an external electrical circuit, a compensation module and a measurement module. The compensation module i...