ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,434, issued on Nov. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor laser device and method for manufacturing the same" was invented by Asami Uchiyama (Tokyo) and Takeshi Yamatoya (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A modulator-integrated semiconductor laser (100) includes a semiconductor laser (101), an electro-absorption modulator (102), and an optical attenuator (103) that are monolithically integrated. The electro-absorption modulator (102) and the optical attenuator (103) are connected in series in a stage succeeding the semiconductor laser (101). A control unit (44) controls the DC bias voltage to be app...