ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,793, issued on Nov. 18, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and power apparatus" was invented by Kazuya Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device which reduces a concentration of the hole current on the upper-surface side. The semiconductor device includes a buffer layer of the first conductivity type, an upper-surface region on the upper-surface side from the buffer layer, and a lower-surface region on the lower-surface side from the buffer layer. A collector layer of the second conductivity type formed in the lower-surface region includes a first collector layer and a ...