ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,762, issued on Nov. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Kentaro Yoshida (Tokyo) and Koichiro Kisu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device according to the present disclosure has features (1) to (3) below. The feature (1) is that "a lower surface of an on-chip bonding material has a shape matching a surface shape of a main current wiring connection region in plan view". The feature (2) is that "an emitter sense wiring is directly connected to a side surface of the main current wiring connection region". The feature (3) is that "an IGBT chip has an ineffec...