US Patent Issued to Mitsubishi Electric on Nov. 18 for "Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,190, issued on Nov. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device, power converter, method for manufacturing semiconductor device, and method for manufacturing power converter" was invented by Yasunari Hino (Tokyo), Yo Tanaka (Tokyo) and Masao Kikuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a p...