ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,153, issued on Nov. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor apparatus" was invented by Hiroyuki Nakamura (Fukuoka, Japan) and Kazutoyo Takano (Fukuoka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor apparatus includes: a semiconductor substrate; a diffusion layer; a first depletion prevention region; a channel stopper electrode, a monitor electrode and an insulating film. The inner edge portion of the monitor electrode is positioned between the diffusion layer and the first depletion prevention region. A distance between the outer edge portion of the channel stopper electrode and the inner edge por...