US Patent Issued to Mitsubishi Electric on Nov. 18 for "Power semiconductor device and method of manufacturing the same, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,704, issued on Nov. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Power semiconductor device and method of manufacturing the same, and power conversion device" was invented by Yasuyuki Sanda (Tokyo), Masaki Goto (Tokyo), Hayato Terada (Tokyo), Hodaka Rokubuichi (Tokyo) and Haruna Tada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The unev...