US Patent Issued to MITSUBISHI ELECTRIC on Nov. 18 for "Nitride semiconductor device, and method of manufacturing nitride semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,165, issued on Nov. 18, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Nitride semiconductor device, and method of manufacturing nitride semiconductor device" was invented by Yuki Takiguchi (Tokyo), Shuichi Hiza (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the...