US Patent Issued to Mitsubishi Electric on Nov. 11 for "Semiconductor device, electric power conversion device, and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,328, issued on Nov. 11, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device, electric power conversion device, and method for manufacturing semiconductor device" was invented by Kohei Ebihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type; an active region in which a main current flows in a thickness direction of the semiconductor substrate; a terminal region of a second conductivity type formed in a surface layer of the drift layer and surrounding the active region; a covering material covering the terminal region...