ALEXANDRIA, Va., June 17 -- United States Patent no. 12,314,807, issued on May 27, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Method of generating specific information on semiconductor device, method of managing specific information on semiconductor device, and manufacturing apparatus for semiconductor device" was invented by Hiroshi Miyoshi (Tokyo) and Noriyuki Yabuoshi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Specific information is extracted from a semiconductor device in a method with greater versatility. A first reading region on a metal film included in the semiconductor device is identified based on a base point defined on the semiconductor device. A predefined number of largest ...