US Patent Issued to MITSUBISHI ELECTRIC on May 20 for "Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,076, issued on May 20, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor device" was invented by Rina Tanaka (Tokyo), Yutaka Fukui (Tokyo), Hideyuki Hatta (Tokyo) and Kohei Adachi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes: a body region of a second conductivity type provided on a drift layer of a first conductivity type; a source region of a first conductivity type provided on the body region; a source electrode connected to the source region; a gate insulating film...