US Patent Issued to Mitsubishi Electric on May 20 for "Semiconductor laser element, method for manufacturing same, and semiconductor laser device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,607, issued on May 20, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor laser element, method for manufacturing same, and semiconductor laser device" was invented by Chikara Watatani (Tokyo), Motoharu Miyashita (Tokyo) and Takehiro Nishida (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladd...