ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,569, issued on May 13, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Masanori Tsukuda (Tokyo), Koichi Nishi (Tokyo), Shinya Soneda (Tokyo), Koji Tanaka (Tokyo), Norikazu Sakai (Tokyo) and Taketoshi Shikano (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first principal electrode and a first control electrode pad are formed on a first principal surface of the semiconductor chip. A second principal electrode and a second control electrode pad are formed on a second principal surface of the semiconductor chip. The second principal electrode and the second control electrode pad are respectively bonded ...