ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,739, issued on March 4, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor wafer and method for manufacturing same" was invented by Yuki Taketomi (Tokyo), Kohei Miki (Tokyo) and Shinichi Miyakuni (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor wafer according to the invention of the present application includes a first step of forming a gallium nitride growth layer which is divided into a plurality of small sections, on an upper surface of a silicon substrate and a second step of filling portions between the plurality of small sections with an insulating film, wherein the insulating fil...