US Patent Issued to Mitsubishi Electric on March 4 for "Semiconductor pressure sensor and pressure sensor device" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,241,804, issued on March 4, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor pressure sensor and pressure sensor device" was invented by Mitsuhiro Umano (Tokyo), Hirofumi Konishi (Tokyo) and Mayumi Fujiwara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "This semiconductor pressure sensor includes: a first semiconductor substrate; a second semiconductor substrate; and a first piezoresistance element and a second piezoresistance element provided in the second semiconductor substrate. A first recess and a second recess are formed on the first semiconductor substrate, and a first cavity surrounded by the first recess and the second s...