ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,795, issued on March 4, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Shinya Soneda (Tokyo) and Akihiko Furukawa (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device according to the technology disclosed in the present specification, a temperature detection region is provided with a diffusion layer of a second conductivity type provided on a surface layer of a drift layer of a first conductivity type, a well layer of a first conductivity type provided on a surface layer of the diffusion layer and electrically connected to an anode electrode, and a cathode layer of a first conduct...