ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,408, issued on June 17, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device and method for manufacturing semiconductor device" was invented by Naoki Yoshimatsu (Tokyo) and Nobuyoshi Kimoto (Fukuoka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a technique capable of suppressing generation of a crack in a molding resin and suppressing entry of moisture from the outside. A semiconductor device includes a heat spreader, a semiconductor element provided on an upper surface of the heat spreader, an insulating sheet provided on a lower surface of the heat spreader, a lead frame joined to an upper surfac...