US Patent Issued to Mitsubishi Electric on June 17 for "Epitaxial wafer, semiconductor device, and method for manufacturing epitaxial wafer" (Japanese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,340, issued on June 17, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Epitaxial wafer, semiconductor device, and method for manufacturing epitaxial wafer" was invented by Atsushi Era (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial wafer according to the present disclosure includes: a substrate; a buffer layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, yless than0) on the substrate; a back-barrier layer formed of a crystal having the composition formula represented by AlxGayInzN (x+y+z=1, yless than0, zless than0) on the buffer layer; a channel layer formed of a crystal having the c...