US Patent Issued to Mitsubishi Electric on June 10 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,887, issued on June 10, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Kazuya Konishi (Tokyo), Shinya Soneda (Tokyo), Koichi Nishi (Tokyo), Tetsuya Nitta (Tokyo) and Akihiko Furukawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique capable of reducing turn-on power losses. A semiconductor device includes: a semiconductor substrate including a drift layer; and a base layer, a contact layer, and a source layer which are provided in the semiconductor substrate. A gate portion is provided in a first trench, with a first gate ins...