ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,933, issued on June 10, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Hidenori Fujii (Tokyo), Shinya Soneda (Tokyo) and Takahiro Nakatani (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect of the present disclosure, a semiconductor device includes a substrate including an IGBT region, and a diode region, a surface electrode provided on a top surface of the substrate and a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate, wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top su...